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期刊论文 5

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(GaxIn1−x)2O3薄膜；带隙可调谐；磁控溅射 1

非晶Sm-Co膜，面内单轴各向异性，磁控溅射 1

高纯金属；溅射靶材；集成电路；薄膜；金属化 1

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Scaling up of cluster beam deposition technology for catalysis application

《化学科学与工程前沿（英文）》 2021年 第15卷 第6期   页码 1360-1379 doi: 10.1007/s11705-021-2101-7

摘要： Many research works have demonstrated that the combination of atomically precise cluster deposition and theoretical calculations is able to address fundamental aspects of size-effects, cluster-support interactions, and reaction mechanisms of cluster materials. Although the wet chemistry method has been widely used to synthesize nanoparticles, the gas-phase synthesis and size-selected strategy was the only method to prepare supported metal clusters with precise numbers of atoms for a long time. However, the low throughput of the physical synthesis method has severely constrained its wider adoption for catalysis applications. In this review, we introduce the latest progress on three types of cluster source which have the most promising potential for scale-up, including sputtering gas aggregation source, pulsed microplasma cluster source, and matrix assembly cluster source. While the sputtering gas aggregation source is leading ahead with a production rate of ~20 mg·h–1, the pulsed microplasma source has the smallest physical dimensions which makes it possible to compact multiple such devices into a small volume for multiplied production rate. The matrix assembly source has the shortest development history, but already show an impressive deposition rate of ~10 mg·h–1. At the end of the review, the possible routes for further throughput scale-up are envisaged.

关键词： nanoparticle     cluster     cluster beam deposition     magnetron sputtering     heterogeneous catalysis    

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Molecular dynamics simulations of initial Pd and PdO nanocluster growth in a magnetron gas aggregation

Pascal Brault, William Chamorro-Coral, Sotheara Chuon, Amaël Caillard, Jean-Marc Bauchire, Stève Baranton, Christophe Coutanceau, Erik Neyts

《化学科学与工程前沿（英文）》 2019年 第13卷 第2期   页码 324-329 doi: 10.1007/s11705-019-1792-5

摘要： Molecular dynamics simulations are carried out for describing growth of Pd and PdO nanoclusters using the ReaxFF force field. The resulting nanocluster structures are successfully compared to those of nanoclusters experimentally grown in a gas aggregation source. The PdO structure is quasi-crystalline as revealed by high resolution transmission microscope analysis for experimental PdO nanoclusters. The role of the nanocluster temperature in the molecular dynamics simulated growth is highlighted.

关键词： molecular dynamics     cluster growth     plasma sputtering     nanocatalyst    

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磁控溅射法生长的带隙可调谐(GaxIn1−x)2O3 Research Articles

张法碧1,孙巾寓1,李海鸥1,周娟1,王荣1,孙堂友1,傅涛1,肖功利1,李琦1,刘兴鹏1,张秀云1,郭道友2,王相虎3,秦祖军1

《信息与电子工程前沿（英文）》 2021年 第22卷 第10期   页码 1370-1378 doi: 10.1631/FITEE.2000330

摘要： 采用磁控溅射技术和热退火技术在(0001)蓝宝石衬底上制备了多组分氧化物(GaxIn1−x)2O3薄膜，实现可调带隙。详细研究了三元化合物(GaxIn1−x)2O3在整个组成范围内的光学性质和能带结构演化。X射线衍射谱表明，Ga含量在0.11至0.55之间的(GaxIn1−x)2O3薄膜既有立方结构，也有单斜结构，而Ga含量高于0.74的(GaxIn1−x)2O3薄膜只有单斜结构。在可见光范围，所有薄膜透光率均高于86%，吸收边清晰，条纹清晰。此外，随着Ga含量增加，紫外吸收边出现380至250 nm的蓝移，表明禁带能从3.61 eV增加至4.64 eV。实验结果为透明导电化合物半导体(GaxIn1−x)2O3薄膜在光电和光伏行业的应用，特别是在显示器、发光二极管和太阳能电池的应用奠定了基础。

关键词： (GaxIn1−x)2O3薄膜；带隙可调谐；磁控溅射    

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集成电路用高纯金属溅射靶材发展研究

何金江 ,吕保国 ,贾倩,丁照崇 ,刘书芹 ,罗俊锋 ,王兴权

《中国工程科学》 2023年 第25卷 第1期   页码 79-87 doi: 10.15302/J-SSCAE-2023.01.003

摘要： Sputtering materials for VLSI thin film devices [M]‍.Sputtering materials for VLSI thin film devices [M]‍.Sputtering materials for VLSI thin film devices [M]‍.Sputtering materials for VLSI thin film devices [M]‍.The influence of target surface morphology on the deposition flux during direct-current magnetron sputtering

关键词： 高纯金属；溅射靶材；集成电路；薄膜；金属化    

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(011)取向单晶衬底上生长的非晶Sm-Co薄膜的面内各向异性调控 Article

梁文会, 周厚博, 熊杰夫, 胡凤霞, 李佳, 张健, 王晶, 孙继荣, 沈保根

《工程（英文）》 2020年 第6卷 第2期   页码 158-163 doi: 10.1016/j.eng.2019.11.010

摘要：

具有单轴面内各向异性的非晶Sm-Co薄膜在信息存储和自旋电子学领域中都具有广阔的应用前景。产生单轴面内各向异性的最有效方法是在薄膜沉积过程中施加面内磁场。然而，这种方法通常需要复杂的设备。本文中，我们报道了一种产生单轴面内各向异性的新方法，只需要将非晶Sm-Co薄膜生长在(011)取向的单晶衬底上，薄膜生长过程中不需要施加任何外部磁场。薄膜的各向异性常数kA随衬底晶格常数的变化而变化。生长在LaAlO3 (011)衬底上的非晶Sm-Co薄膜的各向异性常数kA高达3.3×104 J·m−3。详细分析表明，衬底各向异性应变引起的铁磁畴的择优生长，以及薄膜中Sm-Co、Co-Co取向对的有序化，在非晶Sm-Co薄膜单轴面内各向异性的产生上起到了重要作用。这项工作为在非晶Sm-Co薄膜中获得单轴面内各向异性提供了一种新方法。

关键词： 非晶Sm-Co膜，面内单轴各向异性，磁控溅射    

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标题 作者 时间 类型 操作

Scaling up of cluster beam deposition technology for catalysis application

期刊论文

Molecular dynamics simulations of initial Pd and PdO nanocluster growth in a magnetron gas aggregation

Pascal Brault, William Chamorro-Coral, Sotheara Chuon, Amaël Caillard, Jean-Marc Bauchire, Stève Baranton, Christophe Coutanceau, Erik Neyts

期刊论文

磁控溅射法生长的带隙可调谐(GaxIn1−x)2O3

张法碧1,孙巾寓1,李海鸥1,周娟1,王荣1,孙堂友1,傅涛1,肖功利1,李琦1,刘兴鹏1,张秀云1,郭道友2,王相虎3,秦祖军1

期刊论文

集成电路用高纯金属溅射靶材发展研究

何金江 ,吕保国 ,贾倩,丁照崇 ,刘书芹 ,罗俊锋 ,王兴权

期刊论文

(011)取向单晶衬底上生长的非晶Sm-Co薄膜的面内各向异性调控

梁文会, 周厚博, 熊杰夫, 胡凤霞, 李佳, 张健, 王晶, 孙继荣, 沈保根

期刊论文